? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 150 v v dgr t j = 25 c to 175 c, r gs = 1m 150 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c (chip capability) 240 a i l(rms) external lead current limit 200 a i dm t c = 25 c, pulse width limited by t jm 600 a i a t c = 25 c 120 a e as t c = 25 c2j dv/dt i s i dm , v dd v dss , t j 175c 20 v/ns p d t c = 25 c 830 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms t = 1 minute 2500 v~ i isol 1ma t = 1 second 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 150 v v gs(th) v ds = v gs , i d = 8ma 2.5 5.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 25 a t j = 150 c 3 ma r ds(on) v gs = 10v, i d = 60a, note 1 4.1 5.2 m gigamos tm trencht2 hiperfet tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode IXFN240N15T2 either source terminal s can be used as the source terminal or the kelvin source ( gate return ) terminal. ds100192(09/09) minibloc, sot-227 e153432 g d s s g = gate d = drain s = source v dss = 150v i d25 = 240a r ds(on) 5.2m t rr 140ns features international standard package minibloc, with aluminium nitride isolation isolation voltage 2500 v~ high current handling capability fast intrinsic diode avalanche rated low r ds(on) advantages easy to mount space savings high power density applications synchronous recification dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor drives uninterruptible power supplies high speed power switching applications advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXFN240N15T2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s; duty cycle, d 2%. sot-227b (ixfn) outline (m4 screws (4x) supplied) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 125 210 s c iss 32 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 2280 pf c rss 270 pf r gi gate input resistance 1.50 t d(on) 48 ns t r 125 ns t d(off) 77 ns t f 145 ns q g(on) 460 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 125 nc q gd 130 nc r thjc 0.18 c/w r thcs 0.05 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 240 a i sm repetitive, pulse width limited by t jm 960 a v sd i f = 100a, v gs = 0v, note 1 1.2 v t rr 140 ns q rm 410 nc i rm 8.2 a i f = 120a, -di/dt = 100a/ s v r = 75v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external)
? 2009 ixys corporation, all rights reserved IXFN240N15T2 fig. 1. output characteristics @ t j = 25oc 0 40 80 120 160 200 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 5v 6v 5.5v fig. 3. output characteristics @ t j = 150oc 0 40 80 120 160 200 240 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 5 v 6 v 4 v fig. 4. r ds(on) normalized to i d = 120a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 240a i d = 120a fig. 5. r ds(on) normalized to i d = 120a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 40 80 120 160 200 240 280 320 360 i d - amperes r ds(on) - normalized v gs = 10v t j = 175oc t j = 25oc fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 400 012345678910 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 5.5v 6v fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 200 220 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXFN240N15T2 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - amperes t j = 150oc - 40oc 25oc fig. 8. transconductance 0 50 100 150 200 250 300 350 400 0 20 40 60 80 100 120 140 160 180 200 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 280 320 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 400 450 500 q g - nanocoulombs v gs - volts v ds = 75v i d = 120a i g = 10ma fig. 11. capacitance 0.1 1.0 10.0 100.0 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - nanofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1.0 10.0 100.0 1,000.0 1 10 100 1,000 v ds - volts i d - amperes 25s 100s 1ms 10ms r ds(on) limit t j = 175oc t c = 25oc single pulse 100ms external lead limit dc ixys ref: f_240n15t2 (8v)9-14-09
? 2009 ixys corporation, all rights reserved IXFN240N15T2 fig. 14. resistive turn-on rise time vs. drain current 0 40 80 120 160 200 240 280 320 60 80 100 120 140 160 180 200 220 240 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 1 ? , v gs = 10v v ds = 75v fig. 15. resistive turn-on switching times vs. gate resistance 0 100 200 300 400 500 600 700 12345678910 r g - ohms t r - nanoseconds 0 30 60 90 120 150 180 210 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 75v i d = 120a i d = 240a fig. 16. resistive turn-off switching times vs. junction temperature 0 100 200 300 400 500 600 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 60 70 80 90 100 110 120 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 75v i d = 120a i d = 240a fig. 17. resistive turn-off switching times vs. drain current 0 50 100 150 200 250 300 350 400 60 80 100 120 140 160 180 200 220 240 i d - amperes t f - nanoseconds 60 70 80 90 100 110 120 130 140 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 75v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 60 100 140 180 220 260 300 340 380 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = 10v v ds = 75v i d = 240a i d = 120a fig. 18. resistive turn-off switching times vs. gate resistance 100 200 300 400 500 600 700 12345678910 r g - ohms t f - nanoseconds 0 100 200 300 400 500 600 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 75v i d = 240a i d = 120a
ixys reserves the right to change limits, test conditions, and dimensions. IXFN240N15T2 ixys ref: f_240n15t2 (8v)9-14-09 fig. 19. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 19. maximium transient thermal impedance .sadgsfgsf 0.300
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